High quality type II InAs/GaSb superlattices with cutoff wavelength ∼3.7 μm using interface engineering
Identifieur interne : 00BF36 ( Main/Repository ); précédent : 00BF35; suivant : 00BF37High quality type II InAs/GaSb superlattices with cutoff wavelength ∼3.7 μm using interface engineering
Auteurs : RBID : Pascal:03-0393629Descripteurs français
- Pascal (Inist)
English descriptors
- KwdEn :
Abstract
We report the most recent advance in the area of type II InAs/GaSb superlattices that have cutoff wavelength of ∼3.7 μm. With GaxIn1-x type interface engineering techniques, the mismatch between the superlattices and the GaSb (001) substrate has been reduced to <0.1%. There is no evidence of dislocations using the best examination tools of x-ray, atomic force microscopy, and transmission electron microscopy. The full width half maximum of the photoluminescence peak at 11 K was ∼4.5 meV using an Ar+ ion laser (514 nm) at fluent power of 140 mW. The integrated photoluminescence intensity was linearly dependent on the fluent laser power from 2.2 to 140 mW at 11 K. The temperature-dependent photoluminescence measurement revealed a characteristic temperature of one T1=245K at sample temperatures below 160 K with fluent power of 70 mW, and T1=203K for sample temperatures above 180 K with fluent power of 70 and 420 mW. © 2003 American Institute of Physics.
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 00C998
Links to Exploration step
Pascal:03-0393629Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">High quality type II InAs/GaSb superlattices with cutoff wavelength ∼3.7 μm using interface engineering</title><author><name sortKey="Wei, Yajun" uniqKey="Wei Y">Yajun Wei</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for Quantum Devices, Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Illinois</region></placeName><wicri:cityArea>Center for Quantum Devices, Department of Electrical and Computer Engineering, Northwestern University, Evanston</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Air Force Research Laboratory, Materials and Manufacturing Directorate, AFRL/MLPS, Wright-Patterson Air Force Base, Ohio 45433-7707</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Ohio</region></placeName><wicri:cityArea>Air Force Research Laboratory, Materials and Manufacturing Directorate, AFRL/MLPS, Wright-Patterson Air Force Base</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Missile Defense Agency, Alexandria, Virginia 22304</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Virginie</region></placeName><wicri:cityArea>Missile Defense Agency, Alexandria</wicri:cityArea></affiliation></author><author><name sortKey="Bae, Junjik" uniqKey="Bae J">Junjik Bae</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for Quantum Devices, Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Illinois</region></placeName><wicri:cityArea>Center for Quantum Devices, Department of Electrical and Computer Engineering, Northwestern University, Evanston</wicri:cityArea></affiliation></author><author><name sortKey="Gin, Aaron" uniqKey="Gin A">Aaron Gin</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for Quantum Devices, Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Illinois</region></placeName><wicri:cityArea>Center for Quantum Devices, Department of Electrical and Computer Engineering, Northwestern University, Evanston</wicri:cityArea></affiliation></author><author><name sortKey="Hood, Andrew" uniqKey="Hood A">Andrew Hood</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for Quantum Devices, Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Illinois</region></placeName><wicri:cityArea>Center for Quantum Devices, Department of Electrical and Computer Engineering, Northwestern University, Evanston</wicri:cityArea></affiliation></author><author><name sortKey="Razeghi, Manijeh" uniqKey="Razeghi M">Manijeh Razeghi</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for Quantum Devices, Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Illinois</region></placeName><wicri:cityArea>Center for Quantum Devices, Department of Electrical and Computer Engineering, Northwestern University, Evanston</wicri:cityArea></affiliation></author><author><name sortKey="Brown, Gail J" uniqKey="Brown G">Gail J. Brown</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for Quantum Devices, Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Illinois</region></placeName><wicri:cityArea>Center for Quantum Devices, Department of Electrical and Computer Engineering, Northwestern University, Evanston</wicri:cityArea></affiliation></author><author><name sortKey="Tidrow, Meimei" uniqKey="Tidrow M">Meimei Tidrow</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for Quantum Devices, Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Illinois</region></placeName><wicri:cityArea>Center for Quantum Devices, Department of Electrical and Computer Engineering, Northwestern University, Evanston</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">03-0393629</idno><date when="2003-10-01">2003-10-01</date><idno type="stanalyst">PASCAL 03-0393629 AIP</idno><idno type="RBID">Pascal:03-0393629</idno><idno type="wicri:Area/Main/Corpus">00C998</idno><idno type="wicri:Area/Main/Repository">00BF36</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Atomic force microscopy</term><term>Experimental study</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Photoluminescence</term><term>Semiconductor superlattices</term><term>Transmission electron microscopy</term><term>XRD</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>6865C</term><term>7867P</term><term>7855C</term><term>6837L</term><term>6837P</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium composé</term><term>Semiconducteur III-V</term><term>Superréseau semiconducteur</term><term>Photoluminescence</term><term>Diffraction RX</term><term>Microscopie électronique transmission</term><term>Microscopie force atomique</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report the most recent advance in the area of type II InAs/GaSb superlattices that have cutoff wavelength of ∼3.7 μm. With Ga<sub>x</sub>In<sub>1-x</sub> type interface engineering techniques, the mismatch between the superlattices and the GaSb (001) substrate has been reduced to <0.1%. There is no evidence of dislocations using the best examination tools of x-ray, atomic force microscopy, and transmission electron microscopy. The full width half maximum of the photoluminescence peak at 11 K was ∼4.5 meV using an Ar<sup>+</sup> ion laser (514 nm) at fluent power of 140 mW. The integrated photoluminescence intensity was linearly dependent on the fluent laser power from 2.2 to 140 mW at 11 K. The temperature-dependent photoluminescence measurement revealed a characteristic temperature of one T<sub>1</sub>=245K at sample temperatures below 160 K with fluent power of 70 mW, and T<sub>1</sub>=203K for sample temperatures above 180 K with fluent power of 70 and 420 mW. © 2003 American Institute of Physics.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>94</s2></fA05><fA06><s2>7</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>High quality type II InAs/GaSb superlattices with cutoff wavelength ∼3.7 μm using interface engineering</s1></fA08><fA11 i1="01" i2="1"><s1>WEI (Yajun)</s1></fA11><fA11 i1="02" i2="1"><s1>BAE (Junjik)</s1></fA11><fA11 i1="03" i2="1"><s1>GIN (Aaron)</s1></fA11><fA11 i1="04" i2="1"><s1>HOOD (Andrew)</s1></fA11><fA11 i1="05" i2="1"><s1>RAZEGHI (Manijeh)</s1></fA11><fA11 i1="06" i2="1"><s1>BROWN (Gail J.)</s1></fA11><fA11 i1="07" i2="1"><s1>TIDROW (Meimei)</s1></fA11><fA14 i1="01"><s1>Center for Quantum Devices, Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="02"><s1>Air Force Research Laboratory, Materials and Manufacturing Directorate, AFRL/MLPS, Wright-Patterson Air Force Base, Ohio 45433-7707</s1></fA14><fA14 i1="03"><s1>Missile Defense Agency, Alexandria, Virginia 22304</s1></fA14><fA20><s1>4720-4722</s1></fA20><fA21><s1>2003-10-01</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 2003 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>03-0393629</s0></fA47><fA60><s1>P</s1><s3>CC</s3></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of applied physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We report the most recent advance in the area of type II InAs/GaSb superlattices that have cutoff wavelength of ∼3.7 μm. With Ga<sub>x</sub>In<sub>1-x</sub> type interface engineering techniques, the mismatch between the superlattices and the GaSb (001) substrate has been reduced to <0.1%. There is no evidence of dislocations using the best examination tools of x-ray, atomic force microscopy, and transmission electron microscopy. The full width half maximum of the photoluminescence peak at 11 K was ∼4.5 meV using an Ar<sup>+</sup> ion laser (514 nm) at fluent power of 140 mW. The integrated photoluminescence intensity was linearly dependent on the fluent laser power from 2.2 to 140 mW at 11 K. The temperature-dependent photoluminescence measurement revealed a characteristic temperature of one T<sub>1</sub>=245K at sample temperatures below 160 K with fluent power of 70 mW, and T<sub>1</sub>=203K for sample temperatures above 180 K with fluent power of 70 and 420 mW. © 2003 American Institute of Physics.</s0> </fC01><fC02 i1="01" i2="3"><s0>001B60H65</s0></fC02><fC02 i1="02" i2="3"><s0>001B70H67</s0></fC02><fC02 i1="03" i2="3"><s0>001B70H55C</s0></fC02><fC02 i1="04" i2="3"><s0>001B60A16B</s0></fC02><fC02 i1="05" i2="3"><s0>001B60A16C</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>6865C</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>7867P</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>7855C</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>6837L</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>6837P</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Gallium composé</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Gallium compounds</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Superréseau semiconducteur</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Semiconductor superlattices</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Photoluminescence</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Photoluminescence</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Diffraction RX</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>XRD</s0></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Microscopie électronique transmission</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Transmission electron microscopy</s0></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Microscopie force atomique</s0></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Atomic force microscopy</s0></fC03><fN21><s1>272</s1></fN21><fN47 i1="01" i2="1"><s0>0338M000267</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Main/Repository
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 00BF36 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 00BF36 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Main
|étape= Repository
|type= RBID
|clé= Pascal:03-0393629
|texte= High quality type II InAs/GaSb superlattices with cutoff wavelength ∼3.7 μm using interface engineering
}}
| This area was generated with Dilib version V0.5.77. |  |